IEC 63275-1:2022 pdf download Semiconductor devices – Reliability test method for silicon carbide discrete metal‑oxide semiconductor field effect transistors – Part 1: Test method for bias temperature instability
This part of IEC 63275 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 1 0 h).